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PJA3403_R1_00001 PanJit Semiconductor


PJA3403.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
350+0.24 EUR
601+0.14 EUR
688+0.12 EUR
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Technische Details PJA3403_R1_00001 PanJit Semiconductor

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 3.1A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V.

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PJA3403_R1_00001 PJA3403_R1_00001 Panjit PJA3403-1867410.pdf MOSFET 30V P-Channel Enhancement Mode MOSFET
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PJA3403_R1_00001 PJA3403_R1_00001 Panjit International Inc. PJA3403.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
30+0.71 EUR
100+0.4 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3403_R1_00001 PJA3403-1867410.pdf
Hersteller: Panjit
MOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 2195 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.92 EUR
10+0.68 EUR
100+0.38 EUR
1000+0.2 EUR
3000+0.17 EUR
9000+0.13 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3403_R1_00001 PJA3403.pdf
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
30+0.71 EUR
100+0.4 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH