PJA3407_R1_00001 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 345+ | 0.21 EUR |
| 575+ | 0.12 EUR |
| 635+ | 0.11 EUR |
| 810+ | 0.089 EUR |
| 865+ | 0.083 EUR |
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Produktbewertung abgeben
Technische Details PJA3407_R1_00001 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V.
Weitere Produktangebote PJA3407_R1_00001 nach Preis ab 0.083 EUR bis 1.04 EUR
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PJA3407_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3407_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3407_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V |
auf Bestellung 39330 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3407_R1_00001 | Hersteller : Panjit |
MOSFET 30V P-Channel Enhancement Mode MOSFET |
auf Bestellung 16382 Stücke: Lieferzeit 14-28 Tag (e) |
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PJA3407_R1_00001 Produktcode: 177008 |
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PJA3407-R1-00001 | Hersteller : Panjit |
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