PJA3413_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
| 75000+ | 0.11 EUR |
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Technische Details PJA3413_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJA3413_R1_00001 nach Preis ab 0.098 EUR bis 0.9 EUR
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PJA3413_R1_00001 | Panjit |
MOSFETs 20V P-Channel Enhancement Mode MOSFET |
auf Bestellung 2535 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3413_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Pulsed drain current: -13.6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 146mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2353 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3413_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 |
auf Bestellung 87312 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJA3413_R1_00001 |
|
Hersteller: Panjit
MOSFETs 20V P-Channel Enhancement Mode MOSFET
MOSFETs 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 2535 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.43 EUR |
| 13+ | 0.26 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| PJA3413_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 193+ | 0.44 EUR |
| 388+ | 0.21 EUR |
| 587+ | 0.14 EUR |
| 774+ | 0.11 EUR |
| 1000+ | 0.098 EUR |
| PJA3413_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Description: SOT-23, MOSFET
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
auf Bestellung 87312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.19 EUR |