PJA3413_R1_00001 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Case: SOT23
Mounting: SMD
On-state resistance: 146mΩ
Kind of package: reel; tape
Power dissipation: 1.25W
Drain-source voltage: -20V
Drain current: -3.4A
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13.6A
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Case: SOT23
Mounting: SMD
On-state resistance: 146mΩ
Kind of package: reel; tape
Power dissipation: 1.25W
Drain-source voltage: -20V
Drain current: -3.4A
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -13.6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
685+ | 0.1 EUR |
975+ | 0.074 EUR |
1080+ | 0.066 EUR |
1375+ | 0.052 EUR |
1455+ | 0.049 EUR |
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Technische Details PJA3413_R1_00001 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V.
Weitere Produktangebote PJA3413_R1_00001 nach Preis ab 0.049 EUR bis 0.77 EUR
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PJA3413_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W Case: SOT23 Mounting: SMD On-state resistance: 146mΩ Kind of package: reel; tape Power dissipation: 1.25W Drain-source voltage: -20V Drain current: -3.4A Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -13.6A |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3413_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V |
auf Bestellung 81000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3413_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V |
auf Bestellung 87312 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3413_R1_00001 | Hersteller : Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET |
auf Bestellung 60969 Stücke: Lieferzeit 10-14 Tag (e) |
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