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PJA3416A_R1_00001

PJA3416A_R1_00001 Panjit International Inc.

PJA3416A.pdf
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 592 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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Technische Details PJA3416A_R1_00001 Panjit International Inc.

Description: SOT-23, MOSFET, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 592 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.

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PJA3416A_R1_00001 PJA3416A_R1_00001 Panjit International Inc. PJA3416A.pdf Description: SOT-23, MOSFET
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 592 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416A_R1_00001 PJA3416A_R1_00001 Panjit PJA3416A-1867188.pdf MOSFETs 30V P-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 6 Stücke
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PJA3416A-R1-00001 PJA3416A-R1-00001 Panjit PJA3416A-1867188.pdf MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416A_R1_00001 PJA3416A.pdf
PJA3416A_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 592 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416A_R1_00001 PJA3416A-1867188.pdf
PJA3416A_R1_00001
Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416A-R1-00001 PJA3416A-1867188.pdf
PJA3416A-R1-00001
Hersteller: Panjit
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH