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PJA3416AE_R1_00001

PJA3416AE_R1_00001 Panjit International Inc.

PJA3416AE.pdf
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJA3416AE_R1_00001 Panjit International Inc.

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V.

Weitere Produktangebote PJA3416AE_R1_00001 nach Preis ab 0.087 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 34mΩ
Power dissipation: 1.25W
Drain current: 6.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 32A
auf Bestellung 3146 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
304+0.24 EUR
491+0.15 EUR
695+0.1 EUR
1000+0.09 EUR
3000+0.087 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE_R1_00001 Panjit PJA3416AE-1867297.pdf MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 8210 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.61 EUR
10+0.43 EUR
100+0.19 EUR
1000+0.15 EUR
3000+0.11 EUR
45000+0.097 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE_R1_00001 Panjit International Inc. PJA3416AE.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V
auf Bestellung 29429 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Gate charge: 8.6nC
On-state resistance: 34mΩ
Power dissipation: 1.25W
Drain current: 6.5A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Pulsed drain current: 32A
auf Bestellung 3146 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
304+0.24 EUR
491+0.15 EUR
695+0.1 EUR
1000+0.09 EUR
3000+0.087 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE-1867297.pdf
PJA3416AE_R1_00001
Hersteller: Panjit
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 8210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.61 EUR
10+0.43 EUR
100+0.19 EUR
1000+0.15 EUR
3000+0.11 EUR
45000+0.097 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 10 V
auf Bestellung 29429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.19 EUR
1000+0.15 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH