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PJA3432_R1_00001

PJA3432_R1_00001 Panjit International Inc.

PJA3432.pdf Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.095 EUR
6000+ 0.088 EUR
9000+ 0.076 EUR
Mindestbestellmenge: 3000
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Technische Details PJA3432_R1_00001 Panjit International Inc.

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V.

Weitere Produktangebote PJA3432_R1_00001 nach Preis ab 0.1 EUR bis 0.8 EUR

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PJA3432_R1_00001 PJA3432_R1_00001 Hersteller : Panjit International Inc. PJA3432.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 27013 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
48+ 0.55 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 34
PJA3432_R1_00001 PJA3432_R1_00001 Hersteller : Panjit PJA3432-1867274.pdf MOSFET 30V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 33084 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
66+0.8 EUR
94+ 0.55 EUR
230+ 0.23 EUR
1000+ 0.16 EUR
3000+ 0.12 EUR
9000+ 0.1 EUR
Mindestbestellmenge: 66
PJA3432-R1-00001 Hersteller : Panjit MOSFET SOT-23/MOS/SOT/NFET-20TMN
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