PJA3433-AU_R1_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.08 EUR |
| 6000+ | 0.07 EUR |
| 9000+ | 0.05 EUR |
| 15000+ | 0.05 EUR |
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Technische Details PJA3433-AU_R1_000A1 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote PJA3433-AU_R1_000A1 nach Preis ab 0.07 EUR bis 0.43 EUR
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PJA3433-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Drain current: -1.1A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -4.4A Mounting: SMD Case: SOT23 Drain-source voltage: -30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1555 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3433-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Drain current: -1.1A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -4.4A Mounting: SMD Case: SOT23 Drain-source voltage: -30V |
auf Bestellung 1555 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3433-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 18035 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3433-AU_R1_000A1 | Hersteller : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected |
auf Bestellung 10793 Stücke: Lieferzeit 10-14 Tag (e) |
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