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PJA3433_R1_00001

PJA3433_R1_00001 Panjit International Inc.

PJA3433.pdf
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.095 EUR
9000+0.089 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJA3433_R1_00001 Panjit International Inc.

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
481+0.18 EUR
650+0.13 EUR
725+0.12 EUR
1000+0.094 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433_R1_00001 Panjit 7E7F658DECD488AF2CC318998D149DEE4D7CBFD7863613FC196119BEFDAE1809.pdf MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 38938 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.49 EUR
12+0.3 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.08 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433_R1_00001 Panjit International Inc. PJA3433.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 9199 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
481+0.18 EUR
650+0.13 EUR
725+0.12 EUR
1000+0.094 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 7E7F658DECD488AF2CC318998D149DEE4D7CBFD7863613FC196119BEFDAE1809.pdf
PJA3433_R1_00001
Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 38938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.49 EUR
12+0.3 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.08 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 9199 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
67+0.32 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH