PJA3438_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.071 EUR |
| 6000+ | 0.063 EUR |
| 9000+ | 0.06 EUR |
| 15000+ | 0.055 EUR |
| 21000+ | 0.053 EUR |
| 30000+ | 0.05 EUR |
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Technische Details PJA3438_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V.
Weitere Produktangebote PJA3438_R1_00001 nach Preis ab 0.083 EUR bis 0.35 EUR
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PJA3438_R1_00001 | Panjit |
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 6358 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3438_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
auf Bestellung 31626 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJA3438_R1_00001 |
|
Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 6358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.35 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.086 EUR |
| 3000+ | 0.084 EUR |
| 6000+ | 0.083 EUR |
| PJA3438_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 31626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 82+ | 0.21 EUR |
| 133+ | 0.13 EUR |
| 500+ | 0.097 EUR |
| 1000+ | 0.086 EUR |