PJA3439-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Pulsed drain current: -1A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1487 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 252+ | 0.28 EUR |
| 415+ | 0.17 EUR |
| 926+ | 0.077 EUR |
| 981+ | 0.073 EUR |
| 24000+ | 0.071 EUR |
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Technische Details PJA3439-AU_R1_000A1 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJA3439-AU_R1_000A1 nach Preis ab 0.073 EUR bis 0.55 EUR
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PJA3439-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.3A Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.5W Gate-source voltage: ±20V Pulsed drain current: -1A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 1487 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3439-AU_R1_000A1 | Hersteller : Panjit |
MOSFETs 60V P-Channel Enhancement Mode MOSFET |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3439-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4224 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3439-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Qualification: AEC-Q101 |
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