PJA3471_R1_00501 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Pulsed drain current: -3.6A
Drain current: -900mA
Gate charge: 8nC
On-state resistance: 0.7Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Pulsed drain current: -3.6A
Drain current: -900mA
Gate charge: 8nC
On-state resistance: 0.7Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 9065 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 260+ | 0.28 EUR |
| 410+ | 0.17 EUR |
| 496+ | 0.14 EUR |
| 569+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.11 EUR |
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Technische Details PJA3471_R1_00501 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W, Kind of package: reel; tape, Case: SOT23, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Drain-source voltage: -100V, Pulsed drain current: -3.6A, Drain current: -900mA, Gate charge: 8nC, On-state resistance: 0.7Ω, Power dissipation: 1.25W, Gate-source voltage: ±20V, Polarisation: unipolar.
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