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PJB120N03S-AU_R2_002A1 Panjit International Inc.


PJB120N03S-AU.pdf
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.81 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJB120N03S-AU_R2_002A1 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-263AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.

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PJB120N03S-AU_R2_002A1 Panjit International Inc. PJB120N03S-AU.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.17 EUR
10+3.37 EUR
100+2.35 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.17 EUR
10+3.37 EUR
100+2.35 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH