PJC7002H_R1_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).