PJC7400_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.098 EUR |
| 9000+ | 0.058 EUR |
| 15000+ | 0.054 EUR |
| 21000+ | 0.052 EUR |
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Technische Details PJC7400_R1_00001 Panjit International Inc.
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V.
Weitere Produktangebote PJC7400_R1_00001 nach Preis ab 0.092 EUR bis 0.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJC7400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 7.6A Drain current: 1.9A Gate charge: 4.8nC On-state resistance: 0.11Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
auf Bestellung 5345 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC7400_R1_00001 | Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFET |
auf Bestellung 28012 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7400_R1_00001 | Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V |
auf Bestellung 91128 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJC7400_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 667+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| 782+ | 0.092 EUR |
| PJC7400_R1_00001 |
|
Hersteller: Panjit
MOSFETs 30V N-Channel Enhancement Mode MOSFET
MOSFETs 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 28012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 12+ | 0.25 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| PJC7400_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
auf Bestellung 91128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 66+ | 0.27 EUR |
| 140+ | 0.13 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |