PJC7401_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 9000+ | 0.11 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details PJC7401_R1_00001 Panjit International Inc.
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V.
Weitere Produktangebote PJC7401_R1_00001 nach Preis ab 0.19 EUR bis 0.67 EUR
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PJC7401_R1_00001 | Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V |
auf Bestellung 10372 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7401_R1_00001 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Mounting: SMD Case: SOT323 On-state resistance: 0.18Ω Pulsed drain current: -6A Power dissipation: 0.35W Gate charge: 11nC Polarisation: unipolar Drain current: -1.5A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape |
auf Bestellung 2075 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJC7401_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 10372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 52+ | 0.4 EUR |
| 72+ | 0.3 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| PJC7401_R1_00001 |
|
Hersteller: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Power dissipation: 0.35W
Gate charge: 11nC
Polarisation: unipolar
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
On-state resistance: 0.18Ω
Pulsed drain current: -6A
Power dissipation: 0.35W
Gate charge: 11nC
Polarisation: unipolar
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)