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PJC7401_R1_00001

PJC7401_R1_00001 Panjit International Inc.


PJC7401.pdf Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 30000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJC7401_R1_00001 Panjit International Inc.

Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V.

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PJC7401_R1_00001 PJC7401_R1_00001 Hersteller : PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -6A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
129+0.56 EUR
211+0.34 EUR
329+0.22 EUR
705+0.10 EUR
747+0.10 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001 PJC7401_R1_00001 Hersteller : PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -6A
Mounting: SMD
Case: SOT323
auf Bestellung 1845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
211+0.34 EUR
329+0.22 EUR
705+0.10 EUR
747+0.10 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001 PJC7401_R1_00001 Hersteller : Panjit International Inc. PJC7401.pdf Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 31458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.49 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001 PJC7401_R1_00001 Hersteller : Panjit PJC7401-1869028.pdf MOSFET /C01/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-30TAMP/NF30TA-QI01/PJ///
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