PJC7404_R1_00001 Panjit
auf Bestellung 5672 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |
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Technische Details PJC7404_R1_00001 Panjit
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V.
Weitere Produktangebote PJC7404_R1_00001 nach Preis ab 0.09 EUR bis 0.69 EUR
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PJC7404_R1_00001 | Hersteller : Panjit International Inc. |
 Description: SOT-323, MOSFETPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
auf Bestellung 7753 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJC7404_R1_00001 | Hersteller : PanJit Semiconductor |
PJC7404-R1 SMD N channel transistors |
auf Bestellung 5990 Stücke: Lieferzeit 7-14 Tag (e) |
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PJC7404_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
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