PJC7439-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 715+ | 0.1 EUR |
| 1025+ | 0.07 EUR |
| 1135+ | 0.063 EUR |
| 1380+ | 0.052 EUR |
| 1455+ | 0.049 EUR |
| 9000+ | 0.047 EUR |
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Produktbewertung abgeben
Technische Details PJC7439-AU_R1_000A1 PanJit Semiconductor
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJC7439-AU_R1_000A1 nach Preis ab 0.049 EUR bis 0.58 EUR
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PJC7439-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Drain-source voltage: -60V Drain current: -250mA On-state resistance: 13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT323 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC7439-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7439-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 50820 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7439-AU_R1_000A1 | Hersteller : Panjit |
MOSFET 60V P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |