PJD25N04_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details PJD25N04_L2_00001 Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJD25N04_L2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJD25N04_L2_00001 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PJD25N04_L2_00001 | Panjit |
MOSFET 40V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
PJD25N04-L2-00001 | Panjit |
MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJD25N04_L2_00001 |
|
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJD25N04_L2_00001 |
|
Hersteller: Panjit
MOSFET 40V N-Channel Enhancement Mode MOSFET
MOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJD25N04-L2-00001 |
|
Hersteller: Panjit
MOSFET
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH