PJD30N15_L2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.48 EUR |
| 13+ | 1.67 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
9 Stücke
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Technische Details PJD30N15_L2_00001 Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 102W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V.
Weitere Produktangebote PJD30N15_L2_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PJD30N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 102W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PJD30N15_L2_00001 | Panjit |
MOSFETs 150V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJD30N15_L2_00001 |
|
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJD30N15_L2_00001 |
|
Hersteller: Panjit
MOSFETs 150V N-Channel Enhancement Mode MOSFET
MOSFETs 150V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH