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PJD50N04_L2_00001

PJD50N04_L2_00001 Panjit International Inc.

PJD50N04.pdf
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
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Technische Details PJD50N04_L2_00001 Panjit International Inc.

Description: 40V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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PJD50N04_L2_00001 PJD50N04_L2_00001 Panjit International Inc. PJD50N04.pdf Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJD50N04_L2_00001 PJD50N04_L2_00001 Panjit 0FF81F8EDD24588B61F59C89065BBFE0E2E19508838E72F8DCD55114E82382C3.pdf MOSFETs 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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PJD50N04_L2_00001 PJD50N04.pdf
PJD50N04_L2_00001
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJD50N04_L2_00001 0FF81F8EDD24588B61F59C89065BBFE0E2E19508838E72F8DCD55114E82382C3.pdf
PJD50N04_L2_00001
Hersteller: Panjit
MOSFETs 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH