Produkte > PANJIT INTERNATIONAL INC. > PJE138K_R1_00001
PJE138K_R1_00001

PJE138K_R1_00001 Panjit International Inc.

PJE138K.pdf
Hersteller: Panjit International Inc.
Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.084 EUR
8000+0.069 EUR
12000+0.066 EUR
20000+0.062 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PJE138K_R1_00001 Panjit International Inc.

Description: SOT-523, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 223mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-523 Flat Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.

Weitere Produktangebote PJE138K_R1_00001 nach Preis ab 0.053 EUR bis 0.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PJE138K_R1_00001 PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
556+0.13 EUR
835+0.086 EUR
Mindestbestellmenge: 358 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001 PJE138K_R1_00001 Panjit 9F2CA3022008706187DE575183FBCBB8D9394D6E2CC731C09B25B102EAD3AA94.pdf MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 20642 Stücke:
Lieferzeit 10-14 Tag (e)
11+0.27 EUR
17+0.17 EUR
100+0.11 EUR
500+0.077 EUR
1000+0.069 EUR
2000+0.06 EUR
4000+0.053 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001 PJE138K_R1_00001 Panjit International Inc. PJE138K.pdf Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 21295 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
69+0.26 EUR
151+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
358+0.2 EUR
556+0.13 EUR
835+0.086 EUR
Mindestbestellmenge: 358 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001 9F2CA3022008706187DE575183FBCBB8D9394D6E2CC731C09B25B102EAD3AA94.pdf
PJE138K_R1_00001
Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 20642 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+0.27 EUR
17+0.17 EUR
100+0.11 EUR
500+0.077 EUR
1000+0.069 EUR
2000+0.06 EUR
4000+0.053 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 21295 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
69+0.26 EUR
151+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH