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Technische Details PJE28VM2FN2-R1-00501 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1, Type of diode: TVS, Case: DFN1006-2, Mounting: SMD, Max. off-state voltage: 28V, Semiconductor structure: unidirectional, Capacitance: 25pF, Leakage current: 0.5µA, Max. forward impulse current: 3A, Number of channels: 1, Breakdown voltage: 29V, Peak pulse power dissipation: 0.165kW.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PJE28VM2FN2_R1_00501 | Hersteller : PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 28V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 0.5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 29V Peak pulse power dissipation: 0.165kW |
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