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PJE8403_R1_00001

PJE8403_R1_00001 Panjit International Inc.

PJE8403.pdf
Hersteller: Panjit International Inc.
Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.12 EUR
Mindestbestellmenge: 4000 Stücke
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Technische Details PJE8403_R1_00001 Panjit International Inc.

Description: SOT-523, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523 Flat Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V.

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PJE8403_R1_00001 PJE8403_R1_00001 Panjit International Inc. PJE8403.pdf Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
auf Bestellung 39498 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
79+0.26 EUR
154+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403_R1_00001 Panjit 9401AC4047548FCE26B1B6309BAB095D8A4366EC16C128D7B0E4D0C27BDC12E8.pdf MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 6034 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
auf Bestellung 3975 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
auf Bestellung 39498 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
79+0.26 EUR
154+0.13 EUR
2000+0.12 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 9401AC4047548FCE26B1B6309BAB095D8A4366EC16C128D7B0E4D0C27BDC12E8.pdf
PJE8403_R1_00001
Hersteller: Panjit
MOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 6034 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
auf Bestellung 3975 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH