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PJE8403_R1_00001

PJE8403_R1_00001 Panjit International Inc.


PJE8403.pdf Hersteller: Panjit International Inc.
Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
auf Bestellung 44000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.15 EUR
12000+ 0.13 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details PJE8403_R1_00001 Panjit International Inc.

Description: SOT-523, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523 Flat Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V.

Weitere Produktangebote PJE8403_R1_00001 nach Preis ab 0.089 EUR bis 0.7 EUR

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Preis ohne MwSt
PJE8403_R1_00001 PJE8403_R1_00001 Hersteller : PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
4000+ 0.089 EUR
Mindestbestellmenge: 360
PJE8403_R1_00001 PJE8403_R1_00001 Hersteller : PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
auf Bestellung 3995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJE8403_R1_00001 PJE8403_R1_00001 Hersteller : Panjit International Inc. PJE8403.pdf Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
auf Bestellung 49372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
36+ 0.49 EUR
100+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 25
PJE8403_R1_00001 PJE8403_R1_00001 Hersteller : Panjit PJE8403-1875910.pdf MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected
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