PJE8405_R1_00001 Panjit
| Anzahl | Preis |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.33 EUR |
| 1000+ | 0.18 EUR |
| 4000+ | 0.16 EUR |
| 8000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
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Technische Details PJE8405_R1_00001 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 300mW (Ta).
Weitere Produktangebote PJE8405_R1_00001 nach Preis ab 0.17 EUR bis 0.77 EUR
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PJE8405_R1_00001 | Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
auf Bestellung 3968 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJE8405_R1_00001 |
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Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 3968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 30+ | 0.59 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |