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PJE8405_R1_00001

PJE8405_R1_00001 Panjit

PJE8405-1876121.pdf Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
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5+0.7 EUR
10+0.54 EUR
100+0.33 EUR
1000+0.18 EUR
4000+0.16 EUR
8000+0.14 EUR
24000+0.13 EUR
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Technische Details PJE8405_R1_00001 Panjit

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V.

Weitere Produktangebote PJE8405_R1_00001 nach Preis ab 0.17 EUR bis 0.77 EUR

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PJE8405_R1_00001 PJE8405_R1_00001 Hersteller : Panjit International Inc. PJE8405.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 3968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.59 EUR
100+0.37 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
PJE8405_R1_00001 PJE8405_R1_00001 Hersteller : Panjit International Inc. PJE8405.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
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Im Einkaufswagen  Stück im Wert von  UAH