| Anzahl | Preis |
|---|---|
| 8+ | 0.39 EUR |
| 12+ | 0.24 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJE8407_R1_00001 Panjit
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 300mW (Ta).
Weitere Produktangebote PJE8407_R1_00001 nach Preis ab 0.16 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PJE8407_R1_00001 | Panjit International Inc. |
 Description: 20V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PJE8407_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 43+ | 0.42 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |