PJE8428_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 35+ | 0.52 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.16 EUR |
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Technische Details PJE8428_R1_00001 Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJE8428_R1_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PJE8428_R1_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJE8428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523 Kind of package: reel; tape Kind of channel: enhancement Case: SOT523 Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJE8428_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJE8428_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Kind of package: reel; tape
Kind of channel: enhancement
Case: SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Kind of package: reel; tape
Kind of channel: enhancement
Case: SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH