PJL9602_R2_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 30V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: 30V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.14 EUR |
18+ | 1 EUR |
100+ | 0.77 EUR |
500+ | 0.61 EUR |
1000+ | 0.49 EUR |
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Technische Details PJL9602_R2_00001 Panjit International Inc.
Description: 30V COMPLEMENTARY ENHANCEMENT MO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V, Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.
Weitere Produktangebote PJL9602_R2_00001
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PJL9602_R2_00001 | Hersteller : Panjit International Inc. |
Description: 30V COMPLEMENTARY ENHANCEMENT MO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
Produkt ist nicht verfügbar |
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PJL9602_R2_00001 | Hersteller : Panjit | MOSFET /L9602/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICNP//PJ/SOP8-AS82/PJL9602-ASW9/SOP8-AS01 |
Produkt ist nicht verfügbar |