| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.14 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 2500+ | 0.25 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details PJL9850_R2_00001 Panjit
Description: MOSFET 2N-CH 40V 5.4A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.
Weitere Produktangebote PJL9850_R2_00001 nach Preis ab 0.42 EUR bis 1.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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PJL9850_R2_00001 | Panjit International Inc. |
 Description: MOSFET 2N-CH 40V 5.4A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 1302 Stücke: Lieferzeit 10-14 Tag (e) |
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PJL9850_R2_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.4A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 20A Gate charge: 4.4nC |
auf Bestellung 5047 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJL9850_R2_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 40V 5.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 40V 5.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 1302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.51 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| PJL9850_R2_00001 |
|
Hersteller: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 20A
Gate charge: 4.4nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 20A
Gate charge: 4.4nC
auf Bestellung 5047 Stücke:
Lieferzeit 14-21 Tag (e)