Technische Details PJMB105N60FRC_R2_00201 Panjit
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 35A, Case: TO263AB, Gate-source voltage: 30V, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote PJMB105N60FRC_R2_00201
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PJMB105N60FRC_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO263AB Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJMB105N60FRC_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH