PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor

Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 24W
Leakage current: 0.5µA
Version: ESD
Anzahl je Verpackung: 1 Stücke
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Technische Details PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23, Type of diode: TVS array, Breakdown voltage: 6.46...7.14V, Semiconductor structure: common anode; double, Mounting: SMD, Case: SOT23, Max. off-state voltage: 4.5V, Kind of package: reel; tape, Application: automotive industry, Peak pulse power dissipation: 24W, Leakage current: 0.5µA, Version: ESD, Anzahl je Verpackung: 1 Stücke.
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PJMBZ6V8A-AU_R1_007A1 | Hersteller : Panjit |
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PJMBZ6V8A-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
![]() Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23 Type of diode: TVS array Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 4.5V Kind of package: reel; tape Application: automotive industry Peak pulse power dissipation: 24W Leakage current: 0.5µA Version: ESD |
Produkt ist nicht verfügbar |