PJMD280N60E1_L2_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 600V/ 280M / 13.8A/ EASY TO DRIV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.86 EUR |
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Technische Details PJMD280N60E1_L2_00601 Panjit International Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 13.8A, Pulsed drain current: 41.4A, Power dissipation: 49.1W, Case: TO252AA, Gate-source voltage: ±30V, On-state resistance: 0.28Ω, Mounting: SMD, Gate charge: 27nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJMD280N60E1_L2_00601 nach Preis ab 0.87 EUR bis 2.22 EUR
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PJMD280N60E1_L2_00601 | Hersteller : Panjit International Inc. |
Description: 600V/ 280M / 13.8A/ EASY TO DRIV Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252AA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD280N60E1_L2_00601 | Hersteller : Panjit |
MOSFETs 600V/ 280mohms / 13.8A/ Easy to driver SJ MOSFET |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJMD280N60E1_L2_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 49.1W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PJMD280N60E1_L2_00601 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 49.1W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |