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PJMD280N60E1-L2 Panjit


PJMD280N60E1-3472359.pdf
Hersteller: Panjit
MOSFETs
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Technische Details PJMD280N60E1-L2 Panjit

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 13.8A, Pulsed drain current: 41.4A, Power dissipation: 49.1W, Case: TO252AA, Gate-source voltage: ±30V, On-state resistance: 0.28Ω, Mounting: SMD, Gate charge: 27nC, Kind of package: reel; tape, Kind of channel: enhancement.

Weitere Produktangebote PJMD280N60E1-L2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH