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PJMD990N65EC_L2_00001

PJMD990N65EC_L2_00001 Panjit

PJMD990N65EC-2902623.pdf Hersteller: Panjit
MOSFETs 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.03 EUR
10+2.52 EUR
100+2.01 EUR
250+1.85 EUR
500+1.69 EUR
1000+1.49 EUR
6000+1.32 EUR
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Technische Details PJMD990N65EC_L2_00001 Panjit

Description: 650V SUPER JUNCTION MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V, Power Dissipation (Max): 47.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V.

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PJMD990N65EC_L2_00001 PJMD990N65EC_L2_00001 Hersteller : Panjit International Inc. PJMD990N65EC.pdf Description: 650V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+5.72 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
PJMD990N65EC_L2_00001 PJMD990N65EC_L2_00001 Hersteller : Panjit International Inc. PJMD990N65EC.pdf Description: 650V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.38 EUR
10+9.09 EUR
100+6.66 EUR
500+5.72 EUR
Mindestbestellmenge: 2
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PJMD990N65EC_L2_00001 Hersteller : PanJit Semiconductor PJMD990N65EC.pdf PJMD990N65EC-L2 SMD N channel transistors
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