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PJMF120N60EC-T0 Panjit



Hersteller: Panjit
MOSFETs TO220 600V 30A N-CH
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Technische Details PJMF120N60EC-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Power dissipation: 33W, Case: ITO220AB, Gate-source voltage: ±30V, On-state resistance: 0.12Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 69A, Gate charge: 51nC.

Weitere Produktangebote PJMF120N60EC-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH