PJMF360N60EC_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 1.84 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.92 EUR |
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Technische Details PJMF360N60EC_T0_00001 Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V.
Weitere Produktangebote PJMF360N60EC_T0_00001
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PJMF360N60EC_T0_00001 | Panjit |
MOSFETs 22V,ESD Protection,SOT-23,UNI |
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJMF360N60EC_T0_00001 |
|
Hersteller: Panjit
MOSFETs 22V,ESD Protection,SOT-23,UNI
MOSFETs 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJMF360N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH