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PJMF580N60E1-T0 Panjit



Hersteller: Panjit
MOSFETs TO220 600V 8A N-CH
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Technische Details PJMF580N60E1-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 8A, Pulsed drain current: 24A, Power dissipation: 28W, Case: ITO220AB, Gate-source voltage: ±30V, On-state resistance: 0.58Ω, Mounting: THT, Gate charge: 15nC, Kind of package: tube, Kind of channel: enhancement.

Weitere Produktangebote PJMF580N60E1-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH