PJMF900N60E1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 600V/ 900MOHM SUPER JUNCTION EAS
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 23.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.16 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 0.95 EUR |
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Technische Details PJMF900N60E1_T0_00001 Panjit International Inc.
Description: 600V/ 900MOHM SUPER JUNCTION EAS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Power Dissipation (Max): 23.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB-F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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PJMF900N60E1_T0_00001 | Hersteller : Panjit |
MOSFET 600V/ 900mohm Super Junction Easy version Gen.1 |
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