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PJMF990N65EC-T0 Panjit



Hersteller: Panjit
MOSFETs TO220 650V 4.7A N-CH
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Technische Details PJMF990N65EC-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4.7A, Pulsed drain current: 9.5A, Power dissipation: 22.5W, Case: ITO220AB, Gate-source voltage: ±30V, On-state resistance: 990mΩ, Mounting: THT, Gate charge: 9.7nC, Kind of package: tube, Kind of channel: enhancement.

Weitere Produktangebote PJMF990N65EC-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit Semiconductor PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH