PJMH060N65FR2_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 650V/ 60M / FAST RECOVERY QRR/T
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 100.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4614 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C: 58.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 23A, 10V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.54 EUR |
| 30+ | 6.06 EUR |
| 120+ | 5.07 EUR |
| 510+ | 4.34 EUR |
| 1020+ | 4.32 EUR |
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Technische Details PJMH060N65FR2_T0_00601 Panjit International Inc.
Description: 650V/ 60M / FAST RECOVERY QRR/T, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Supplier Device Package: TO-247AD, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 100.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4614 pF @ 400 V, Current - Continuous Drain (Id) @ 25°C: 58.3A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 23A, 10V.
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PJMH060N65FR2_T0_00601 | Hersteller : Panjit |
MOSFETs 650V/ 60m ohms / Fast Recovery Qrr/trr SJ MOSFET |
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| PJMH060N65FR2_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
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