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PJMH120N60EC-T0 Panjit



Hersteller: Panjit
MOSFETs TO247 600V 30A N-CH SUPER J
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Technische Details PJMH120N60EC-T0 Panjit

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Power dissipation: 235W, Case: TO247AD-3, Gate-source voltage: ±30V, On-state resistance: 0.12Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 69A, Gate charge: 51nC.

Weitere Produktangebote PJMH120N60EC-T0

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH