PJMP099N60EC_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.72 EUR |
| 50+ | 7.42 EUR |
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Technische Details PJMP099N60EC_T0_00601 Panjit International Inc.
Description: 600V/ 99M / 39A/ EASY TO DRIVER, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V, Power Dissipation (Max): 308W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V.
Weitere Produktangebote PJMP099N60EC_T0_00601 nach Preis ab 7.09 EUR bis 12.92 EUR
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PJMP099N60EC_T0_00601 | Hersteller : Panjit |
MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET |
auf Bestellung 1997 Stücke: Lieferzeit 10-14 Tag (e) |
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