PJMP210N65EC_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 5+ | 3.96 EUR |
| 50+ | 1.95 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.42 EUR |
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Technische Details PJMP210N65EC_T0_00601 Panjit International Inc.
Description: 650V/ 390MOHM / 10A/ EASY TO DRI, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V.
Weitere Produktangebote PJMP210N65EC_T0_00601 nach Preis ab 1.59 EUR bis 4.01 EUR
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PJMP210N65EC_T0_00601 | Panjit |
MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET |
auf Bestellung 2812 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJMP210N65EC_T0_00601 |
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Hersteller: Panjit
MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 2812 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.01 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.59 EUR |