Technische Details PJQ4433EP_R2_00201 Panjit
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -62A, Pulsed drain current: -195A, Power dissipation: 21.7W, Case: DFN3333-8, Gate-source voltage: ±25V, On-state resistance: 8.8mΩ, Mounting: SMD, Gate charge: 54nC, Kind of package: reel, Kind of channel: enhancement.
Weitere Produktangebote PJQ4433EP_R2_00201
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PJQ4433EP-R2-00201 | Hersteller : Panjit |
 MOSFETs |
Produkt ist nicht verfügbar |
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| PJQ4433EP_R2_00201 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -62A Pulsed drain current: -195A Power dissipation: 21.7W Case: DFN3333-8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |