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PJQ4443P-AU_R2_000A1

PJQ4443P-AU_R2_000A1 Panjit

PJQ4443P_AU-1867607.pdf Hersteller: Panjit
MOSFET 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 4390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.41 EUR
100+1.08 EUR
500+0.86 EUR
1000+0.68 EUR
2500+0.67 EUR
5000+0.56 EUR
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Technische Details PJQ4443P-AU_R2_000A1 Panjit

Description: 40V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V.

Weitere Produktangebote PJQ4443P-AU_R2_000A1 nach Preis ab 0.73 EUR bis 1.71 EUR

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PJQ4443P-AU_R2_000A1 PJQ4443P-AU_R2_000A1 Hersteller : Panjit International Inc. PJQ4443P-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
auf Bestellung 1002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
12+1.50 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PJQ4443P-AU_R2_000A1 PJQ4443P-AU_R2_000A1 Hersteller : Panjit International Inc. PJQ4443P-AU.pdf Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH