PJQ4460AP-AU_R2_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 27+ | 0.65 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
| 2000+ | 0.26 EUR |
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Technische Details PJQ4460AP-AU_R2_000A1 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN3333-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJQ4460AP-AU_R2_000A1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PJQ4460AP-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc) Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PJQ4460AP-AU_R2_000A1 | Panjit |
MOSFET 60V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PJQ4460AP-AU_R2_000A1 |
|
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJQ4460AP-AU_R2_000A1 |
|
Hersteller: Panjit
MOSFET 60V N-Channel Enhancement Mode MOSFET
MOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH