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PJQ4468AP_R2_00001

PJQ4468AP_R2_00001 Panjit International Inc.


PJQ4468AP.pdf Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 4975 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2 EUR
16+ 1.73 EUR
100+ 1.2 EUR
500+ 1 EUR
1000+ 0.85 EUR
2000+ 0.76 EUR
Mindestbestellmenge: 13
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Technische Details PJQ4468AP_R2_00001 Panjit International Inc.

Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V.

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PJQ4468AP_R2_00001 PJQ4468AP_R2_00001 Hersteller : Panjit International Inc. PJQ4468AP.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Produkt ist nicht verfügbar
PJQ4468AP_R2_00001 PJQ4468AP_R2_00001 Hersteller : Panjit PJQ4468AP-1867640.pdf MOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJQ4468AP-R2-00001 PJQ4468AP-R2-00001 Hersteller : Panjit PJQ4468AP-1867640.pdf MOSFET DFN3333-8L/MOS/DFN/NFET-60FQMN
Produkt ist nicht verfügbar