PJQ4848P-AU_R2_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.41 EUR |
| 10000+ | 0.38 EUR |
| 15000+ | 0.37 EUR |
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Technische Details PJQ4848P-AU_R2_000A1 Panjit International Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: DFN3333B-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2.4W (Ta), 39.6W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJQ4848P-AU_R2_000A1 nach Preis ab 0.46 EUR bis 1.72 EUR
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PJQ4848P-AU_R2_000A1 | Panjit International Inc. |
Description: MOSFET 2N-CH 40V 9A 8DFN Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.4W (Ta), 39.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: DFN3333B-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ4848P-AU_R2_000A1 |
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Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Description: MOSFET 2N-CH 40V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.4W (Ta), 39.6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN3333B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.72 EUR |
| 17+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.46 EUR |