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PJQ5412_R2_00001

PJQ5412_R2_00001 Panjit International Inc.

PJQ5412.pdf
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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Technische Details PJQ5412_R2_00001 Panjit International Inc.

Description: 30V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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PJQ5412_R2_00001 PJQ5412_R2_00001 Panjit International Inc. PJQ5412.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5412_R2_00001 PJQ5412_R2_00001 Panjit PJQ5412-1867609.pdf MOSFETs 30V N-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 3 Stücke
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PJQ5412-R2-00001 PJQ5412-R2-00001 Panjit MOSFETs DFN5060 N CHAN 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5412_R2_00001 PJQ5412.pdf
PJQ5412_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5412_R2_00001 PJQ5412-1867609.pdf
PJQ5412_R2_00001
Hersteller: Panjit
MOSFETs 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5412-R2-00001
PJQ5412-R2-00001
Hersteller: Panjit
MOSFETs DFN5060 N CHAN 30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH