auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.38 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.78 EUR |
| 3000+ | 0.66 EUR |
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Technische Details PJQ5433E-AU_R2_006A1 Panjit
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 3.3W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5433E-AU_R2_006A1 nach Preis ab 0.69 EUR bis 1.65 EUR
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| PJQ5433E-AU_R2_006A1 | Hersteller : Panjit International Inc. |
 Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5433E-AU_R2_006A1 | Hersteller : Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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