| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.41 EUR |
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Technische Details PJQ5442_R2_00001 Panjit
Description: 40V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN5060-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote PJQ5442_R2_00001 nach Preis ab 0.54 EUR bis 1.88 EUR
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PJQ5442_R2_00001 | Panjit International Inc. |
 Description: 40V N-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN5060-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2100 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJQ5442_R2_00001 |
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Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |